vishay semiconductors ild1205t/1206t/1207t document number 83599 rev. 1.9, 20-apr-07 www.vishay.com 1 for technical support, pl ease contact: optocoupl er.answers@vishay.com optocoupler, phototransistor output, dual channel, soic-8 package, 110 c rated features ? operating temperature from - 55 c to + 110 c ? two channel coupler ? soic-8 surface mountable package ? isolation test voltage, 4000 v rms ? compatible with dual wave, vapor phase and ir reflow soldering ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec i17901 8 a1 c2 a3 c4 8 c 7e 6c 5e description the 110 c rated ild1205t/1206t/1207t are optically coupled pairs with a gallium arsenide infrared led and a silicon npn phototrans istor. signal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. the ild1205t/1206t/ 1207t come in a standard soic-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. in addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. a specified minimum and maximum ctr allows a narrow tolerance in the electrical design of the adjacent circuits. the high bv ceo of 70 v gives a higher safety margin compared to the industry standard of 30 v. agency approvals ? ul - file no. e52744 system code y ? cul - file no. e52744, equivalent to csa bulletin 5a ? din en 60747-5-2(vde0884) available with option 1 applications ? ac adapters ?plcs ? switch mode power supplies ? dc/dc converters ? microprocessor i/o interfaces ? general impedance matching circuits note: for additional information on the availabl e options refer to option information. order information part remarks ild1205t ctr 40 - 80 %, soic-8 ild1206t ctr 63 - 125 %, soic-8 ild1207t ctr 100 - 200 %, soic-8
www.vishay.com 2 document number 83599 rev. 1.9, 20-apr-07 vishay semiconductors ild1205t/1206t/1207t for technical support, please contac t: optocoupler.answers@vishay.com note: 1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maxi mum ratings can cause permanent damage to th e device. functional operation of the device is not implied at these or any other co nditions in excess of those given in the operat ional sections of this document. exposure to abs olute maximum rating for extended periods of the time can adversely affect reliability. absolute maximum ratings 1) parameter test condition symbol value unit input continuous forward current per channel i f 30 ma peak reverse voltage v r 6.0 v peak pulsed current 1.0 s, 300 pps i fsm 1.0 a power dissipation p diss 50 mw derate linearly from 25 c 0.5 mw/c output collector-emitter voltage v ce 70 v power dissipation per channel p diss 125 mw derate linearly from 25 c 1.25 mw/c coupler isolation test voltage t = 1.0 s v iso 4000 v rms operating temperature t amb - 55 to + 110 c total package dissipation ambient (2 leds + 2 detectors, 2 channels) p tot 300 mw derate linearly from 25 c 4.0 mw/c storage temperature t stg - 55 to + 150 c figure 1. power dissipati on vs. ambient temperature 0 30 60 90 120 150 0204060 8 0 100 120 am b ient temperat u re (c) 17544 p (m w ) phototransistor total ir - diode
document number 83599 rev. 1.9, 20-apr-07 www.vishay.com 3 vishay semiconductors ild1205t/1206t/1207t for technical support, pl ease contact: optocoupl er.answers@vishay.com note: 1) t amb = 25 c, unless otherwise specified. minimum and maximum values are test ing requirements. typical values are characteri stics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. electrical characteristics 1) parameter test condition part symbol min typ. max unit input forward voltage i f = 10 ma v f 1.2 1.55 v reverse current v r = 6.0 v i r 0.1 100 a capacitance v r = 0 c i 25 pf output collector-emitter leakage current v ce = 10 v, i f = 0 i ceo 5.0 50 na collector-emitter breakdown voltage i c = 100 a bv ceo 70 v emitter-collector breakdown voltage i e = 10 a bv eco 7.0 v collector-emitter saturation voltage i f = 10 ma, i c = 2.5 ma v cesat 0.4 v collector-emitter capacitance v ce = 0 c ce 10 pf coupler dc current transfer ratio v ce = 5.0 v, i f = 10 ma ild1205t ctr 40 80 % ild1206t ctr 63 125 % ild1207t ctr 100 200 % capacitance (input-output) c io 0.5 pf switching characteristics parameter test condition part symbol min. type max unit turn-on time i c = 2.0 ma, r l = 100 , v cc = 5.0 v t on 5.0 s turn-off time i c = 2.0 ma, r l = 100 , v cc = 5.0 v t off 4.0 s figure 2. switching test circuit iild205t_0 8 t off t r 10 % 50 % 90 % t s t pdoff t pdon t on t r t d o u tp u t inp u t 10 % 50 % 90 % inp u t v out v cc = 5 v r l
www.vishay.com 4 document number 83599 rev. 1.9, 20-apr-07 vishay semiconductors ild1205t/1206t/1207t for technical support, please contac t: optocoupler.answers@vishay.com note: 1) as per iec60747-5-2, 7.4.3.8.1, this optocoupl er is suitable for "safe electrical in sulation" only within the safety ratings. compliance with the safety ratings shall be ensured by means of protective circuits. typical characteristics t amb = 25 c, unless otherwise specified safety and insulation ratings 1) parameter test condition part symbol min. type max unit climatic classification (according to iec 68 part 1) 55/110/21 polution degree (din vde 0109) 2.0 mm comparative tracking index per din iec112/vde 0303 part 1, group iiia per din vde 6110 175 399 175 399 v iotm v iotm 6000 v v iorm v iorm 560 v resistance, input to output r io 100 p si 350 mw i si 150 ma t si 165 c creeapage 4.0 mm clearance 4.0 mm figure 3. forward current vs. forward voltage 60 50 40 30 20 10 0 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 v f-for w ard v oltage ( v ) if-for w ard c u rrent (ma) 19149 0 c 25 c 50 c 110 c - 55 c figure 4. v ce vs. i c , (non-saturated) 0 5 10 15 20 25 30 01234567 8 910 v ce ( v ) collector c u rrent (ma) if = 5 ma if = 10 ma if = 15 ma if= 20 ma if = 30 ma
document number 83599 rev. 1.9, 20-apr-07 www.vishay.com 5 vishay semiconductors ild1205t/1206t/1207t for technical support, pl ease contact: optocoupl er.answers@vishay.com figure 5. collector to emitter leakage current vs. ambient temperature figure 6. v ce vs. i c , (saturated) figure 7. normalized ctr vs. ambient temperature (saturated, v ce = 0.4 v) 0.001 0.01 0.1 1 10 100 1000 10000 - 55 - 40 - 25 - 10 5 20 35 50 65 8 0 95 110 125 t am b (c) collector to emitter leakage c u rrent ice0 (na) v ce = 40 v v ce = 24 v v ce = 12 v 0 2 4 6 8 10 12 14 16 1 8 20 0.0 0.1 0.2 0.3 0.4 0.5 v ce ( v ) collector c u rrent (ma) if = 1 ma if = 2 ma if = 5 ma if = 10 ma if = 25 ma 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 - 55 - 40 - 25 - 10 20 35 50 65 8 0 95 110 125 t am b (c) n ormalized ctr i f = 5 ma 5 i f = 10 ma i f = 1 ma n ormalized to i = 10 ma t am b = 25 c f normalized ctr vs. ambient temperature (non-saturated, v ce = 5 v) figure 8. cut-off-frequency (- 3 db) vs. collector current figure 9. t on , t off vs. load resistance (100 to 20000 ) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 n ormalized ctr - 55 - 40 - 25 - 10 5 20 35 50 65 8 0 95 110 125 t am b (c) n ormalized to i = 10 ma t am b = 25 c f i f = 1 ma i f = 5 ma i f = 10 ma 1 10 100 1000 0.1 1.0 10.0 100.0 i c (ma) c u t-off-fre qu ency fctr (khz) ild1205,6 + 25 c + 50 c v ce = 5 v , t am b = 25 c 0 c 1 10 100 1000 0.1 1 10 100 load resistance (k ) t on , t off ( u sec) t off t on
www.vishay.com 6 document number 83599 rev. 1.9, 20-apr-07 vishay semiconductors ild1205t/1206t/1207t for technical support, please contac t: optocoupler.answers@vishay.com package dimensions in inches (millimeters) 0.036 (0.91) 0.014 (0.36) 0.170 (4.32) 0.045 (1.14) 0.260 (6.6) r 0.010 (0.13) 0.050 (1.27) i17 8 020 iso method a 40 0.240 (6.10) 0.050 (1.27) typ. 0.016 (0.41) 0.004 (0.10) 0.00 8 (0.20) lead coplanarity 0.001 max. 0.00 8 (0.20) 7 0.120 0.002 (3.05 0.05) c l r0.010 (0.25) max. 0.040 (1.02) 5 max. pin one i.d. 0.154 0.002 (3.91 0.05) 0.015 0.002 (0.3 8 0.05) 0.230 0.002 (5. 8 4 0.05) 0.020 0.004 (0.51 0.10) 2 plcs. 0.05 8 5 0.002 (1.49 0.05) 0.125 0.002 (3.1 8 0.05)
document number 83599 rev. 1.9, 20-apr-07 www.vishay.com 7 vishay semiconductors ild1205t/1206t/1207t for technical support, pl ease contact: optocoupl er.answers@vishay.com ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into t he atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its polic y of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semico nductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make c hanges to improve technical design and may do so without further notice. parameters can vary in different applications. all operat ing parameters must be validated for each customer application by the customer. should the buyer use vish ay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or i ndirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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